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| savantic semiconductor product specification silicon npn power transistors 2n5804 2N5805 description with to-3 package high breakdown voltage applications switching regulator inverters solenoid and relay drivers motor controls pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n5804 300 v cbo collector-base voltage 2N5805 open emitter 375 v 2n5804 225 v ceo collector-emitter voltage 2N5805 open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a p d total power dissipation t c =25 110 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2n5804 2N5805 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5804 225 v ceo(sus) collector-emitter sustaining voltage 2N5805 i c =0.1a ;i b =0 300 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i ceo collector cut-off current v ce =ratedv ce ; i b =0 10 ma 2n5804 12 i cev collector cut-off current 2N5805 v ce =ratedv ce ; v be(off) =1.5v 10 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =5a ; v ce =4v 20 100 f t trainsistion frequency i c =1a ; v ce =10v 15 mhz savantic semiconductor product specification 3 silicon npn power transistors 2n5804 2N5805 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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